Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs
نویسندگان
چکیده
منابع مشابه
A Review of GaN on SiC High Electron-Mobility Power Transistors (HEMTs) and MMICs
Gallium–nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and elded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupl...
متن کاملChannel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs
A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave A...
متن کاملDesign of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
متن کاملHigh Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications
Worldwide Interoperability for M i c r o w a v e Access, better known as WiMAX, is a standardsbased wireless technology for providing highspeed, last-mile broadband connectivity to homes and businesses as well as for mobile wireless networks. With the fixed version of WiMAX, based on IEEE 802.16-2004, transmissions can potentially carry data traffic over more than 30 miles (~50 km) in rural are...
متن کاملGaN HEMTs and MMICs for space applications
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth can be performed on either SiC or Si substrates in order to provide high-quality AlGaN/GaN heterostructures. These heterostructures are then utilized in order to realize transistors and integrated circuits ranging from high-voltage transistors for voltage conversion in efficient power switches, L/S-band...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2010
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/msf.645-648.791